Sn-containing Si3N4-based composites for adaptive excellent friction and wear in a wide temperature range

Ceramic design based on reducing friction and wear-related failures in moving mechanical systems has gained tremendous attention due to increased demands for durability, reliability and energy conservation. However, only few materials can meet these requirements at high temperatures. Here, we designed and prepared a Sn-containing Si₃N₄-based composite, which displayed excellent tribological properties at high temperatures. The results showed that the friction coefficient and wear rate of the composites were reduced to 0.27 and 4.88 × 10^?6 mm³ N^?1 m^?1 in air at 800 °C. The wear mechanism of the sliding pairs at different temperatures was revealed via detailed analyses of the worn surfaces. In addition, the tribo-driven graphitization was detected on the wear surfaces and in the wear debris, and the carbon phase was identified by SEM, TEM, and Raman spectrum.     

Annealing temperature-dependent structural and electrical properties of (Ta2O5)1-x - (TiO2)x thin films,x ≤ 0.11

(Ta₂O₅)_1-x- (TiO₂)_x (TTO_x) thin films, with x = 0, 0.03, 0.06, 0.08, and 0.11, were deposited using magnetron direct current (DC) sputtering method onto the P/boron-silicon (1 0 0) substrates by varying areas of Tantalum and Titanium metallic targets, in oxygen environment at ambient temperature. The as-deposited thin films were annealed at temperatures ranging from 500 to 800 °C. Generally, the formation of the Ta₂O₅ structure was observed from the X-ray diffraction measurements of the annealed films. The capacitance of prepared metal– oxide– semiconductor (MOS) structures of Ag/TTO_x/p-Si was measured at 1 MHz. The dielectric constant of the deposited films was observed altering with varying composition and annealing temperature, showing the highest value 71, at 1 MHz, for the TTO_x films, x = 0.06, annealed at 700 °C. With increasing annealing temperature, from 700 to 800 °C, the leakage current density was observed, generally decreasing, from 10^?5 to 10^?8 A cm^?2, for the prepared compositions. Among the prepared compositions, films with x = 0.06, annealed at 800 °C, having the observed value of dielectric constant 48, at 1 MHz; and the leakage current density 2.7 × 10^?8 A cm^?2, at the electric field of 3.5 × 10⁵ V cm^?1, show preferred potential as a dielectric for high-density silicon memory devices.     

Bio-Based,Self-Crosslinkable Eucommia ulmoides Gum/Silica Hybrids with Body Temperature Triggering Shape Memory Capability

At present, the synthesis of body temperature triggering shape memory polymers usually requires elaborate structural design, which limits their wide application. Herein, starting from bio-based Eucommia ulmoides gum (EUG), a series of EUG/silica hybrids (ESHs) are prepared through a facile one-pot process, in which EUG is epoxied and then self-crosslinked with SiO₂ by epoxy ring-open reaction. Varying the amount of H₂O₂, the shape memory transition temperature (T_trans) of ESHs is adjusted to 47.4–36.6 ℃, which is close to human body temperature (37 ℃). Among them, ESH-17 exhibited the best body temperature triggering shape memory ability (T_trans = 36.6 ℃), which can restore the permanent shape within 60 s at 37 ℃ with a shape fixity ratio of 99% and shape recovery ratio near 100%. In addition, the shape memory mechanism is discussed and shows some application scenarios of ESHs. The as-produced materials can be used as smart biomaterials such as self-tightening sutures, self-sealing root canal filling materials, and so on.     

Influence of temperature on acoustic emission source location accuracy in underground structure

An acoustic emission (AE) experiment was carried out to explore the AE location accuracy influenced by temperature. A hollow hemispherical specimen was used to simulate common underground structures. In the process of heating with the flame, the pulse signal of constant frequency was stimulated as an AE source. Then AE signals received by each sensor were collected and used for comparing localization accuracy at different temperatures. Results show that location errors of AE keep the same phenomenon in the early and middle heating stages. In the later stage of heating, location errors of AE increase sharply due to the appearance of cracks. This provides some beneficial suggestions on decreasing location errors of structural cracks caused by temperature and improves the ability of underground structure disaster prevention and control.     

Er3+-Yb3+ ions doped fluoro-aluminosilicate glass-ceramics as a temperature-sensing material

The transparent Er³⁺-Yb³⁺-doped fluoro-aluminosilicate glass-ceramic (GC) was prepared by melt-quenching. The crystal phase, morphology, and up-conversion (UC) luminescence of as-produced GC were characterized by X-ray diffraction, scanning electron microscopy, and fluorescence spectrophotometry, respectively. The results show that BaYF₅ nanocrystals were uniformly distributed in the glass matrix of the as-produced GC. When the as-produced GC was subjected to heat treatment, the crystallinity was increased, but the crystal identity remains unchanged. Such heat-treatment doubled the intensity of the UC luminescence, and this enhancement was ascribed to the increased incorporation of both Er³⁺ and Yb³⁺ ions into the lower phonon energy environment of BaYF₅ nanocrystals. Furthermore, the heat-treated GC was stable against further crystallization, and consequently its UC luminescence was stable at the application temperature. The heat-treated GC was found to possess an outstanding temperature-sensing capability.     

一种新型的室温快速固化胶黏剂的研制

本文开发了一种新型的方舱夹芯板用室温固化高强度环氧结构胶黏剂,验证了其物化特性、相关力学性能和环境适应性。结果表明此胶黏剂具有优良性能,可以满足方舱用大板胶黏剂的使用需求。     

镍基高温合金GH202高温氧化后的微观组织演变

研究了镍基高温合金GH202在800~1100 ℃高温氧化后晶粒、碳化物和强化相的演变过程。采用透射电子显微镜、扫描电子显微镜和电子背散射衍射对其微观结构进行了表征。结果表明：镍基高温合金的硬度随氧化温度的升高而降低，1100 ℃氧化100 h后，硬度降低了43.5%。800和900 ℃氧化后晶粒生长速度较慢，而经900 ℃氧化后晶界碳化物析出显著增加。在1000和1100 ℃氧化后，晶粒尺寸明显增大。氧化过程中晶界迁移是由晶界两侧自由能差决定，温度越高，晶界向曲率中心迁移越快，大量细小晶粒被吞并形成了大晶粒。大块状碳化物（MC）分解成大量的碳原子，与Cr原子结合形成少量的富Cr颗粒状M₂₃C₆。在900 ℃氧化150 h后，M₂₃C₆演化为富Ti的M₆C。随着氧化温度的升高，碳化物在γ相中回熔。在800、900和1000 ℃氧化后，γ′相逐渐长大，在1100 ℃氧化100 h后，完全溶解于γ相。     

Superradiant Emission from Coherent Excitons in van Der Waals Heterostructures

Recent advancements in isolation and stacking of layered van der Waals materials have created an unprecedented paradigm for demonstrating varieties of 2D quantum materials. Rationally designed van der Waals heterostructures composed of monolayer transition-metal dichalcogenides (TMDs) and few-layer hBN show several unique optoelectronic features driven by correlations. However, entangled superradiant excitonic species in such systems have not been observed before. In this report, it is demonstrated that strong suppression of phonon population at low temperature results in a formation of a coherent excitonic-dipoles ensemble in the heterostructure, and the collective oscillation of those dipoles stimulates a robust phase synchronized ultra-narrow band superradiant emission even at extremely low pumping intensity. Such emitters are in high demand for a multitude of applications, including fundamental research on many-body correlations and other state-of-the-art technologies. This timely demonstration paves the way for further exploration of ultralow-threshold quantum-emitting devices with unmatched design freedom and spectral tunability.     

氯乙烯变温吸附装置的研究

介绍了采用变温吸附技术对氯乙烯进行干燥脱水的工艺流程及运行效果,阐述了变温吸附装置运行过程中出现的问题及相应的解决方法。     

The thermochromic characteristics of Zn-doped VO2 that were prepared by the hydrothermal and post-annealing process and their polyurethane composite films

In this paper, Zn-doped VO₂ nanoparticles have been successfully fabricated by a two-step hydrothermal-annealing process, and the thermally induced visible light transmittance enhancement of Zn-doped VO₂ has been studied for the first time. It is found that Zn-doped VO₂ not only exhibits excellent solar modulation ability (ΔT_sol = 15.27%) but also can reduce the phase transition temperature and increase the visible light transmittance after the heat-induced phase transition (ΔT_lum=+5.78%). Moreover, with the increase of Zn doping concentration, the phase transition temperature (T_c) and phase transition hysteresis (ΔT) both decrease. It is shown that the Zn-doped VO₂-PU films not only have good solar light modulation ability and properties of improving visible light transmission after phase transition, but also have good durability. The research result is of great significance for improving the visible light transmittance after phase transition and realizing the practical application of VO₂ in the field of smart windows.